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APT34M60B

Microchip APT34M60B

N 通道600 V36A(Tc)5V @ 1mA624W(Tc)-55°C ~ 150°C(TJ)通孔

比较
APT34M60B
MOSFET N-CH 600V 36A TO247
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¥4.23

价格更新:一个月前

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产品详情

Overview

The APT34F100L is MOSFET N-CH 1000V 35A TO264, that includes 0.373904 oz Unit Weight, they are designed to operate with a Through Hole Mounting Style, Package Case is shown on datasheet note for use in a TO-264-3, that offers Technology features such as Si, Configuration is designed to work in Single, as well as the 1.135 kW Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, the device is offered in 38 ns Fall Time, the device has a 40 ns of Rise Time, and Vgs Gate Source Voltage is +/- 30 V, and the Id Continuous Drain Current is 35 A, and Vds Drain Source Breakdown Voltage is 1 kV, and the Vgs th Gate Source Threshold Voltage is 4 V, and Rds On Drain Source Resistance is 380 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 150 ns, and the Typical Turn On Delay Time is 39 ns, and Qg Gate Charge is 305 nC, and the Forward Transconductance Min is 39 S, and Channel Mode is Enhancement.

The APT34M120J is Discrete Semiconductor Modules Power MOSFET - MOS8, that includes Single Configuration, they are designed to operate with a 90 ns Fall Time, Id Continuous Drain Current is shown on datasheet note for use in a 35 A, that offers Mounting Style features such as Screw, Package Case is designed to work in SOT-227-4, as well as the 960 W Pd Power Dissipation, the device can also be used as Power MOSFET Modules Product. In addition, the Rds On Drain Source Resistance is 240 mOhms, the device is offered in 60 ns Rise Time, the device has a POWER MOS 8 ISOTOP of Tradename, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 315 ns, and Typical Turn On Delay Time is 100 ns, and the Unit Weight is 1.058219 oz, and Vds Drain Source Breakdown Voltage is 1.2 kV, and the Vgs Gate Source Voltage is 30 V, and Vgs th Gate Source Threshold Voltage is 3 V.

Features

POWER MOS 8™ Series
the avalanche energy rating (Eas) is 930 mJ
a continuous drain current (ID) of 36A
the turn-off delay time is 115 ns

Through Hole Mounting Type

Applications


There are a lot of Microsemi Corporation
APT34M60B applications of single MOSFETs transistors.

  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
产品属性
全选
型号系列: POWER MOS 8™
包装: 管件
部件状态: 在售
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 600 V
25°C 时电流 - 连续漏极 (Id): 36A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 190 毫欧 @ 17A,10V
漏极电流下的最大栅极阈值电压: 5V @ 1mA
最大栅极电荷 (Qg) @ Vgs: 165 nC @ 10 V
最大栅极源电压: ±30V
Vds 时的最大输入电容 (Ciss): 6640 pF @ 25 V
最大功率耗散: 624W(Tc)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
供应商器件封装: TO-247 [B]
封装/外壳: TO-247-3
Microchip Technology

Microchip Technology

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