Microchip 2N3767

NPN500 µA80 V

Overview

The 2N3764 is Bipolar Transistors - BJT PNP Transistor, that includes Through Hole Mounting Style, they are designed to operate with a TO-46-3 Package Case, Technology is shown on datasheet note for use in a Si, that offers Configuration features such as Single, Pd Power Dissipation is designed to work in 500 mW, it has an Maximum Operating Temperature range of + 200 C, it has an Minimum Operating Temperature range of - 55 C. In addition, the Collector Emitter Voltage VCEO Max is 40 V, the device is offered in PNP Transistor Polarity, the device has a 900 mV of Collector Emitter Saturation Voltage, and Collector Base Voltage VCBO is 40 V, and the Emitter Base Voltage VEBO is 5 V, and Maximum DC Collector Current is 1.5 A, and the DC Collector Base Gain hfe Min is 30 at 1 A at 1.5 V, and DC Current Gain hFE Max is 120 at 1 A at 1.5 V.

The 2N3766 is Bipolar Transistors - BJT NPN Transistor, that includes Through Hole Mounting Style, they are designed to operate with a TO-66 Package Case.

Features

Bulk Package
NPN Transistor Type
500 µA Current - Collector (Ic) (Max)
80 V Voltage - Collector Emitter Breakdown (Max)
2.5V @ 100mA, 1A Vce Saturation (Max) @ Ib, Ic
500µA Current - Collector Cutoff (Max)
40 @ 500mA, 5V DC Current Gain (hFE) (Min) @ Ic, Vce
25 W Power - Max
Through Hole Mounting Type