Microsemi 2N3741

PNP4 A80 V

Overview

The 2N3740 is Bipolar Transistors - BJT Leaded Power Transistor, that includes 2N3740 Series, they are designed to operate with a Tube Packaging, Mounting Style is shown on datasheet note for use in a Stud, that offers Package Case features such as TO-66, Pd Power Dissipation is designed to work in 25 W, it has an Maximum Operating Temperature range of + 200 C, the device can also be used as 60 V Collector Emitter Voltage VCEO Max. In addition, the Transistor Polarity is PNP, the device is offered in 600 mV Collector Emitter Saturation Voltage, the device has a 60 V of Collector Base Voltage VCBO, and Emitter Base Voltage VEBO is 7 V, and the Maximum DC Collector Current is 10 A, and Gain Bandwidth Product fT is 4 MHz, and the Continuous Collector Current is 4 A, and DC Collector Base Gain hfe Min is 10.

The 2N3740A is Bipolar Transistors - BJT PNP Transistor, that includes Through Hole Mounting Style, they are designed to operate with a TO-66 Package Case.

Features

Bulk Package
the emitter base voltage is kept at 7V

Through Hole Mounting Type

Applications

There are a lot of Microsemi Corporation
2N3741 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting