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2N3749

Microchip 2N3749

NPN5 A80 V

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2N3749
TRANS NPN 80V 5A TO111
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¥16.15

价格更新:一个月前

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产品详情

Overview

The 2N3741A is Bipolar Transistors - BJT PNP Pwr Trans 80V 4.0A 25W, that includes 2N3741 Series, they are designed to operate with a Bulk Packaging, Part Aliases is shown on datasheet note for use in a BK, that offers Mounting Style features such as Through Hole, Tradename is designed to work in 2N3741, as well as the TO-66-2 Package Case, the device can also be used as Si Technology. In addition, the Configuration is Single, the device is offered in 25 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 200 C, it has an Minimum Operating Temperature range of - 65 C, and the Collector Emitter Voltage VCEO Max is 60 V, and Transistor Polarity is PNP, and the Collector Emitter Saturation Voltage is 0.6 V, and Collector Base Voltage VCBO is 60 V, and the Emitter Base Voltage VEBO is 7 V, and Maximum DC Collector Current is 10 A, and the Gain Bandwidth Product fT is 4 MHz, and DC Collector Base Gain hfe Min is 25 at 50 mA at 10 V, and the DC Current Gain hFE Max is 200 at 250 mA at 1 V.

The 2N3740A is Bipolar Transistors - BJT PNP Transistor, that includes TO-66 Package Case, they are designed to operate with a Through Hole Mounting Style.

Features

Bulk Package
NPN Transistor Type
5 A Current - Collector (Ic) (Max)
80 V Voltage - Collector Emitter Breakdown (Max)
1.5V @ 500mA, 5A Vce Saturation (Max) @ Ib, Ic
20µA Current - Collector Cutoff (Max)
40 @ 1A, 2V DC Current Gain (hFE) (Min) @ Ic, Vce
2 W Power - Max
Stud Mount Mounting Type
产品属性
全选
包装: 散装
部件状态: 在售
晶体管类型: NPN
集电极电流 (Ic)(最大值): 5 A
最大集电极-发射极击穿电压: 80 V
基极电流和集电极电流下的最大集电极-发射极饱和电压: 1.5V @ 500mA,5A
电流 - 集电极截止(最大值): 20µA
直流电流增益 (hFE) 最小值 @ Ic、Vce: 40 @ 1A,2V
最大功率: 2 W
工作温度: -65°C ~ 200°C(TJ)
安装类型: 接线柱安装
封装/外壳: TO-111-4,接线柱
供应商器件封装: TO-111
Microchip Technology

Microchip Technology

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