Infineon S29GL512N10TFI010

64M x 8，32M x 16100 ns-40°C ~ 85°C（TA）

Overview

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology

Software & Hardware ■ Software    — Program Suspend and Resume: read other sectors before programming operation is completed    — Erase Suspend and Resume: read/program other sectors before an erase operation is completed    — Data# polling and toggle bits provide status    — Unlock Bypass Program command reduces overall multiple-word programming time    — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices ■ Hardware    — Advanced Sector Protection    — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings    — Hardware reset input (RESET#) resets device    — Ready/Busy# output (RY/BY#) detects program or erase cycle completion

Features

Tray Package
FLASH Memory Format
512Mbit Memory Size
64M x 8, 32M x 16 Memory Organization
Parallel Memory Interface
100ns Write Cycle Time - Word, Page
100 ns Access Time
2.7V ~ 3.6V Voltage - Supply
Surface Mount Mounting Type