Infineon S29GL01GS11DHIV10

64M x 16110 ns-40°C ~ 85°C（TA）

Overview

The Cypress® S29GL01G/512/256/128S are MirrorBit Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

● Advanced Sector Protection (ASP) – Volatile and non-volatile protection methods for each sector ● Separate 1024-byte One Time Program (OTP) array with two lockable regions ● Common Flash Interface (CFI) parameter table ● Temperature Range – Industrial (-40°C to +85°C) – In-Cabin (-40°C to +105°C) ● 100,000 erase cycles for any sector typical ● 20-year data retention typical ● Packaging Options – 56-pin TSOP – 64-ball LAA Fortified BGA, 13 mm x 11 mm – 64-ball LAE Fortified BGA, 9 mm x 9 mm – 56-ball VBU Fortified BGA, 9 mm x 7 mm

Features

FLASH Memory Format
Package / Case: 64-LBGA
64 Pins

Surface Mount Mounting Type

Applications

There are a lot of Cypress Semiconductor Corp
S29GL01GS11DHIV10 Memory applications.

• cell phones
• eSRAM
• mainframes
• multimedia computers
• networking
• personal computers
• servers
• supercomputers
• telecommunications
• workstations,