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IQE006NE2LM5ATMA1

Infineon IQE006NE2LM5ATMA1

N 通道25 V41A(Ta),298A(Tc)2V @ 250µA2.1瓦(Ta),89瓦(Tc)-55°C ~ 150°C(TJ)表面贴装型

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IQE006NE2LM5ATMA1
MOSFET N-CH 25V 41A/298A 8TSON
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¥16.48

价格更新:一个月前

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产品详情

Overview

The IQC3Z422 is SWITCH PUSH SPST-NO 0.2A 48V, that includes IQ Series, they are designed to operate with a Standard Type, Packaging is shown on datasheet note for use in a Bulk, that offers Current Rating features such as 200mA (DC), Termination Style is designed to work in Quick Connect - 0.110" (2.8mm), as well as the Panel Mount, Snap-In Mounting Type, the device can also be used as Epoxy Sealed Terminals Features. In addition, the Ingress Protection is IP54 - Dust Protected, Water Resistant, the device is offered in SPST-NO Circuit, the device has a 48V of Voltage Rating DC, and Actuator Type is Square, Button, and the Panel Cutout Dimensions is Circular - 15.90mm Dia, and Switch Function is Off-Mom, and the Color Actuator Cap is Black.

The IQC3P422 is SWITCH PUSH SPST-NO 0.2A 48V, that includes Standard Type, they are designed to operate with a Square, Button Actuator Type, Circuit is shown on datasheet note for use in a SPST-NO, that offers Termination Style features such as PC Pin, Mounting Type is designed to work in Panel Mount, Snap-In, as well as the Off-Mom Switch Function, the device can also be used as IQ Series. In addition, the Ingress Protection is IP54 - Dust Protected, Water Resistant, the device is offered in Epoxy Sealed Terminals Features, the device has a Circular - 15.90mm Dia of Panel Cutout Dimensions, and Packaging is Bulk, and the Color Actuator Cap is Black, and Voltage Rating DC is 48V, and the Current Rating is 200mA (DC).

Features

OptiMOS™5 Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
25 V Drain to Source Voltage (Vdss)
41A (Ta), 298A (Tc) Current - Continuous Drain (Id) @ 25°C
4.5V, 10V Drive Voltage (Max Rds On, Min Rds On)
650mOhm @ 20A, 10V Rds On (Max) @ Id, Vgs
2V @ 250µA Vgs(th) (Max) @ Id
82.1 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±16V Vgs (Max)
5453 pF @ 12 V Input Capacitance (Ciss) (Max) @ Vds
2.1W (Ta), 89W (Tc) Power Dissipation (Max)
Surface Mount Mounting Type
产品属性
全选
型号系列: OptiMOS™5
包装: 卷带(TR)
部件状态: 在售
场效应管类型: N 通道
技术: MOSFET(金属氧化物)
漏极至源极电压 (Vdss): 25 V
电流 - 连续漏极 (Id) @ 25°C: 41A(Ta),298A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 4.5V,10V
漏极电流和栅极至源极电压下的最大导通电阻: 650mOhm @ 20A,10V
漏极电流下的最大栅极阈值电压: 2V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 82.1 nC @ 10 V
最大栅极源电压: ±16V
Vds 时的最大输入电容 (Ciss): 5453 pF @ 12 V
最大功率耗散: 2.1瓦(Ta),89瓦(Tc)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
供应商 设备封装: PG-TSON-8-4
包装 / 盒: 8-PowerTDFN
Infineon Technologies

Infineon Technologies

Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。

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