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IPA60R160C6XKSA1

Infineon IPA60R160C6XKSA1

N 通道600 V23.8A(Tc)3.5V @ 750µA34W(Tc)-55°C ~ 150°C(TJ)通孔

比较
IPA60R160C6XKSA1
MOSFET N-CH 600V 23.8A TO220-FP
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¥55.00

价格更新:一个月前

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产品详情

Overview

The IPA60R160C6 is MOSFET N-CH 600V 23.8A TO220-FP, that includes CoolMOS C6 Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IPA60R160C6XK IPA60R160C6XKSA1 SP000652794, that offers Unit Weight features such as 0.211644 oz, Mounting Style is designed to work in Through Hole, as well as the CoolMOS Tradename, the device can also be used as TO-220-3 Package Case. In addition, the Technology is Si, the device is offered in 1 Channel Number of Channels, the device has a Single of Configuration, and Transistor Type is 1 N-Channel, and the Pd Power Dissipation is 34 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 8 ns, and the Rise Time is 13 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 23.8 A, and Vds Drain Source Breakdown Voltage is 600 V, and the Vgs th Gate Source Threshold Voltage is 3 V, and Rds On Drain Source Resistance is 160 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 96 ns, and the Typical Turn On Delay Time is 13 ns, and Qg Gate Charge is 75 nC.

IPA60R125P6XKSA1 with EDA / CAD Models, that includes Tube Packaging, they are designed to operate with a TO-220-3 Package Case, Technology is shown on datasheet note for use in a Si, that offers Transistor Polarity features such as N-Channel, Part Aliases is designed to work in IPA60R125P6 SP001114652, as well as the 1 N-Channel Transistor Type, the device can also be used as 1 Channel Number of Channels.

Features

CoolMOS™ Series
the avalanche energy rating (Eas) is 497 mJ
a continuous drain current (ID) of 23.8A
the turn-off delay time is 96 ns
based on its rated peak drain current 70A.

Through Hole Mounting Type

Applications


There are a lot of Infineon Technologies
IPA60R160C6XKSA1 applications of single MOSFETs transistors.

  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
产品属性
全选
型号系列: CoolMOS™
包装: 散装
部件状态: 不适用于新设计
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 600 V
25°C 时电流 - 连续漏极 (Id): 23.8A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 160 毫欧 @ 11.3A,10V
漏极电流下的最大栅极阈值电压: 3.5V @ 750µA
最大栅极电荷 (Qg) @ Vgs: 75 nC @ 10 V
最大栅极源电压: ±20V
Vds 时的最大输入电容 (Ciss): 1660 pF @ 100 V
最大功率耗散: 34W(Tc)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
供应商器件封装: PG-TO220-FP
封装/外壳: TO-220-3 整包
Infineon Technologies

Infineon Technologies

Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。

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