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IPB180N08S402ATMA1

Infineon IPB180N08S402ATMA1

N 通道80 V180A(Tc)4V @ 220µA277W(Tc)-55°C ~ 175°C(TJ)表面贴装型

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IPB180N08S402ATMA1
MOSFET N-CH 80V 180A TO263-7
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¥16.56

价格更新:一个月前

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产品详情

Overview

The IPB180N06S4H1ATMA2 is MOSFET N-Ch 60V 180A D2PAK-6, that includes IPB180N06 Series, they are designed to operate with a Reel Packaging, Part Aliases is shown on datasheet note for use in a IPB180N06S4-H1 IPB180N06S4H1XT SP001028786, that offers Unit Weight features such as 0.056438 oz, Package Case is designed to work in TO-263-7, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Transistor Type is 1 N-Channel, the device is offered in 180 A Id Continuous Drain Current, the device has a 60 V of Vds Drain Source Breakdown Voltage, and Rds On Drain Source Resistance is 1.7 mOhms, and the Transistor Polarity is N-Channel.

The IPB180N06S4H1ATMA1 is MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS-T2, that includes 1 Channel Number of Channels, they are designed to operate with a TO-263-7 Package Case, Packaging is shown on datasheet note for use in a Reel, that offers Part Aliases features such as IPB180N06S4-H1 IPB180N06S4H1XT SP000415562, Series is designed to work in XPB180N06, as well as the Si Technology, the device can also be used as N-Channel Transistor Polarity. In addition, the Transistor Type is 1 N-Channel.

Features

Tape & Reel (TR) Package
the avalanche energy rating (Eas) is 640 mJ
a continuous drain current (ID) of 180A
the turn-off delay time is 50 ns

Surface Mount Mounting Type

Applications


There are a lot of Infineon Technologies
IPB180N08S402ATMA1 applications of single MOSFETs transistors.

  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
产品属性
全选
型号系列: Automotive, AEC-Q101, OptiMOS™
包装: 卷带(TR)
部件状态: 在售
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 80 V
25°C 时电流 - 连续漏极 (Id): 180A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 2.2 毫欧 @ 100A,10V
漏极电流下的最大栅极阈值电压: 4V @ 220µA
最大栅极电荷 (Qg) @ Vgs: 167 nC @ 10 V
最大栅极源电压: ±20V
Vds 时的最大输入电容 (Ciss): 11550 pF @ 25 V
最大功率耗散: 277W(Tc)
工作温度: -55°C ~ 175°C(TJ)
安装类型: 表面贴装型
供应商器件封装: PG-TO263-7-3
封装/外壳: TO-263-7,D²Pak(6 引线 + 接片)
Infineon Technologies

Infineon Technologies

Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。

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