Infineon CY7C1371D-133AXCT

512K x 366.5 ns0°C ~ 70°C（TA）

Overview

The CY7C1371D/CY7C1373D is a 3.3V, 512K x 36/1 Mbit x 18 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1371D/ CY7C1373D is equipped with the advanced No Bus Latency (NoBL) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data through the SRAM, especially in systems that require frequent Write-Read transitions.

• No Bus Latency™ (NoBL™) architecture eliminates dead cycles between write and read cycles• Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock• Pin-compatible and functionally equivalent to ZBT™ devices• Internally self-timed output buffer control to eliminate the need to use OE• Registered inputs for flow-through operation• Byte Write capability• 3.3V/2.5V I/O power supply• Fast clock-to-output times — 6.5 ns (for 133-MHz device) — 8.5 ns (for 100-MHz device)• Clock Enable (CEN) pin to enable clock and suspend operation• Synchronous self-timed writes• Asynchronous Output Enable• Offered in JEDEC-standard lead-free 100 TQFP, 119-ball BGA and 165-ball fBGA packages• Three chip enables for simple depth expansion• Automatic Power-down feature available using ZZ mode or CE deselect• JTAG boundary scan for BGA and fBGA packages• Burst Capability—linear or interleaved burst order• Low standby power

Features

NoBL™ Series
Package / Case: 100-LQFP
100 Pins
Operating Supply Voltage:3.3V
I/O Type: COMMON

Surface Mount Mounting Type

Applications

There are a lot of Cypress Semiconductor Corp
CY7C1371D-133AXCT Memory applications.

• cell phones
• eSRAM
• mainframes
• multimedia computers
• networking
• personal computers
• servers
• supercomputers
• telecommunications
• workstations,