Infineon CY7C13121KV18-300BZXC

1M x 180°C ~ 70°C（TA）

Overview

 The CY7C13101KV18, CY7C13251KV18, CY7C13121KV18, and CY7C13141KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II architecture. QDR II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR II architecture has separate data inputs and data outputs to completely eliminate the need to “turnaround” the data bus that exists with common I/O devices. Access to each port is through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock. Accesses to the QDR II read and write ports are completely independent of one another. To maximize data throughput, both read and write ports are equipped with DDR interfaces. Each address location is associated with two 8-bit words (CY7C13101KV18), 9-bit words (CY7C13251KV18), 18-bit words (CY7C13121KV18), or 36-bit words (CY7C13141KV18) that burst sequentially into or out of the device. Because data can be transferred into and out of the device on every rising edge of both input clocks (K and K and C and C), memory bandwidth is maximized while simplifying system design by eliminating bus turnarounds. Depth expansion is accomplished with port selects, which enables each port to operate independently. All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the C or C (or K or K in a single clock domain) input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry. These devices are down bonded from the 65 nm 72M QDRII+/DDRII+ devices and hence have the same IDD/ISB1 values and the same JTAG ID code as the equivalent 72M device options. For details refer to the application note AN53189, 65 nm Technology Interim QDRII+/DDRII+ SRAM device family description.

• True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 1K x 8 organization • 0.65-micron CMOS for optimum speed/power • High-speed access: 15 ns • Low operating power: ICC = 110 mA (max.) • Fully asynchronous operation • Automatic power-down • Master CY7C130/CY7C131 easily expands data bus width to 16 or more bits using slave CY7C140/CY7C141 • BUSY output flag on CY7C130/CY7C131; BUSY input on CY7C140/CY7C141 • INT flag for port-to-port communication • Available in 48-pin DIP (CY7C130/140), 52-pin PLCC, 52-Pin TQFP. • Pb-Free packages available

Features

Volatile Memory Type
Package / Case: 165-LBGA
165 Pins
Operating Supply Voltage:1.8V
I/O Type: SEPARATE

Surface Mount Mounting Type

Applications

There are a lot of Cypress Semiconductor Corp
CY7C13121KV18-300BZXC Memory applications.

• multimedia computers
• networking
• personal computers
• servers
• supercomputers
• telecommunications
• workstations,
• DVD disk buffer
• data buffer
• nonvolatile BIOS memory