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CY62146ELL-45ZSXI

Infineon CY62146ELL-45ZSXI

256K x 1645 ns-40°C ~ 85°C(TA)

比较
CY62146ELL-45ZSXI
IC SRAM 4MBIT PARALLEL 44TSOP II
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¥39.52

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

Functional Description[1] The CY62146E is a high performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Deselected (CE HIGH) • Outputs are disabled (OE HIGH) • Both byte high enable and byte low enable are disabled (BHE, BLE HIGH) • When the write operation is active (CE LOW and WE LOW) To write to the device, take Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from IO pins (IO0 through IO7) is written into the location specified on the address pins (A0 through A17). If Byte High Enable (BHE) is LOW, then data from IO pins (IO8 through IO15) is written into the location specified on the address pins (A0 through A17). To read from the device, take Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appears on IO0 to IO7. If Byte High Enable (BHE) is LOW, then data from memory appears on IO8 to IO15. See the “Truth Table” on page 9 for a complete description of read and write modes.

Features

MoBL® Series
Package / Case: 44-TSOP (0.400, 10.16mm Width)
44 Pins
Operating Supply Voltage:5V
I/O Type: COMMON
Freguency at 1MHz
1MHz terminals

Surface Mount Mounting Type

Applications


There are a lot of Cypress Semiconductor Corp
CY62146ELL-45ZSXI Memory applications.

  • Cache memory
  • cell phones
  • eSRAM
  • mainframes
  • multimedia computers
  • networking
  • personal computers
  • servers
  • supercomputers
  • telecommunications
产品属性
全选
型号系列: MoBL®
包装: 托盘
部件状态: 在售
可编程: 未验证
存储器类型: 易失
存储器格式: SRAM
技术: SRAM - 异步
存储容量: 4Mb
存储器组织: 256K x 16
存储器接口: 并联
单词、页面的写入周期时间: 45ns
访问时间: 45 ns
电源电压: 4.5V ~ 5.5V
工作温度: -40°C ~ 85°C(TA)
安装类型: 表面贴装型
封装/外壳: 44-TSOP(0.400",10.16mm 宽)
供应商器件封装: 44-TSOP II
Infineon Technologies

Infineon Technologies

Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。

实时新闻

博斯克数字

收入: 85M

2022年的收入为8500万美元,与2021年增长63%。

国家: 105

博斯克服务全球105个国家的客户。

配件发货: 25M+

我们在过去的五年中发货了2.5亿个配件,比前五年增长148%。

制造商: 950

2022年,博斯克从近950个制造商售卖了配件。

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