Infineon AUIRLR3110Z

N 通道100 V42A（Tc）2.5V @ 100µA140W（Tc）-55°C ~ 175°C（TJ）表面贴装型

Overview

The AUIRLR3105 is MOSFET N-CH 55V 25A DPAK, that includes Tube Packaging, they are designed to operate with a 0.139332 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-252-3, Technology is designed to work in Si, as well as the 57 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C. In addition, the Vgs Gate Source Voltage is 16 V, the device is offered in 25 A Id Continuous Drain Current, the device has a 55 V of Vds Drain Source Breakdown Voltage, and Rds On Drain Source Resistance is 43 mOhms, and the Transistor Polarity is N-Channel, and Qg Gate Charge is 13.3 nC.

The AUIRLR2908TRR is MOSFET 80V 30A 28 mOhm Auto Logic Level MOSFET, that includes 39 A Id Continuous Drain Current, it has an Maximum Operating Temperature range of + 175 C, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-252-3, Packaging is designed to work in Reel, as well as the 120 W Pd Power Dissipation, the device can also be used as 22.5 mOhms Rds On Drain Source Resistance. In addition, the Technology is Si, the device is offered in N-Channel Transistor Polarity, the device has a 0.139332 oz of Unit Weight, and Vds Drain Source Breakdown Voltage is 80 V.

Features

• Logic level gate drive

• Advanced process technology

• Repetitive avalanche allowed up to Tjmax

Applications

• Industrial

• Automotive

• Power management

• Personal electronics