IR AUIRGP4062D

600 V48 A115µJ（开），600µJ（关）-55°C ~ 175°C（TJ）TO-247-3

Overview

Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations

Features

• Low VCE (ON) 

• Low EMI

• Low switching losses 

• Rugged transient performance

• Available in the TO-247AC package

Applications

• Switching applications

• Synchronous rectification

• Uninterruptible power supplies