Infineon AUIRGP4062D-E

600 V48 A115µJ（开），600µJ（关）-55°C ~ 175°C（TJ）TO-247-3

Overview

Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations

Features

Low V_{CE (on)} Trench IGBT Technology

Low Switching Losses

5μs SCSOA

Square RBSOA

100% of The Parts Tested for ILM

Positive V_{CE (on)} Temperature Coefficient.

Ultra Fast Soft Recovery Co-pak Diode

Tighter Distribution of Parameters

Lead-Free, RoHS Compliant

Automotive Qualified * 

Applications

• High Efficiency in a wide range of Applications