Infineon AUIRLR120NTRL

N 通道100 V10A（Tc）2V @ 250µA48W（Tc）-55°C ~ 175°C（TJ）表面贴装型

Overview

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

• Advanced Planar Technology• Logic-Level Gate Drive• Low On-Resistance• Dynamic dV/dT Rating• 175ºC Operating Temperature• Fast Switching• Fully Avalanche Rated• Repetitive Avalanche Allowed up to Tjmax• Lead-Free, RoHS Compliant• Automotive Qualified*

Features

HEXFET® Series
the avalanche energy rating (Eas) is 85 mJ
based on its rated peak drain current 35A.
a 100V drain to source voltage (Vdss)

Surface Mount Mounting Type

Applications

There are a lot of Infineon Technologies
AUIRLR120NTRL applications of single MOSFETs transistors.

• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies