Infineon AUIRF7739L2TR

N 通道40 V46A（Ta），270A（Tc）4V @ 250µA3.8W（Ta），125W（Tc）-55°C ~ 175°C（TJ）表面贴装型

Features

HEXFET® Series
Bulk Package
MOSFET (Metal Oxide) Technology
40 V Drain to Source Voltage (Vdss)
46A (Ta), 270A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
1mOhm @ 160A, 10V Rds On (Max) @ Id, Vgs
4V @ 250µA Vgs(th) (Max) @ Id
330 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
11880 pF @ 25 V Input Capacitance (Ciss) (Max) @ Vds
3.8W (Ta), 125W (Tc) Power Dissipation (Max)
Surface Mount Mounting Type
DirectFET™ Isometric L8 Supplier Device Package
DirectFET™ Isometric L8 Package / Case