Infineon AUIRF7313Q

MOSFET（金属氧化物）逻辑电平门2 N-通道（双）30V6.9A29 毫欧 @ 6.9A，10V3V @ 250µA

Overview

 Advanced Planar Technology 

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. 

Features

HEXFET® Series
Tube Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
30V Drain to Source Voltage (Vdss)
6.9A Current - Continuous Drain (Id) @ 25°C
29mOhm @ 6.9A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
33nC @ 10V Gate Charge (Qg) (Max) @ Vgs
755pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
2.4W Power - Max
Surface Mount Mounting Type