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AUIRF6215

Infineon AUIRF6215

P 通道150 V13A(Tc)4V @ 250µA110W(Tc)-55°C ~ 175°C(TJ)通孔

比较
AUIRF6215
MOSFET P-CH 150V 13A TO220AB
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比较

¥15.84

价格更新:一个月前

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产品详情

Overview

Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Features

HEXFET® Series
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of -150V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 44A.
a threshold voltage of -2V
a 150V drain to source voltage (Vdss)

Through Hole Mounting Type

Applications


There are a lot of Infineon Technologies
AUIRF6215 applications of single MOSFETs transistors.

  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
产品属性
全选
型号系列: HEXFET®
包装: 管件
部件状态: 不适用于新设计
FET 类型: P 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 150 V
25°C 时电流 - 连续漏极 (Id): 13A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 290 毫欧 @ 6.6A,10V
漏极电流下的最大栅极阈值电压: 4V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 66 nC @ 10 V
最大栅极源电压: ±20V
Vds 时的最大输入电容 (Ciss): 860 pF @ 25 V
最大功率耗散: 110W(Tc)
工作温度: -55°C ~ 175°C(TJ)
安装类型: 通孔
供应商器件封装: TO-220AB
封装/外壳: TO-220-3
Infineon Technologies

Infineon Technologies

Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。

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