Infineon AUIRF7379QTR

MOSFET（金属氧化物）逻辑电平门N 和 P 沟道30V5.8A，4.3A45 毫欧 @ 5.8A，10V3V @ 250µA

Features

HEXFET® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
30V Drain to Source Voltage (Vdss)
5.8A, 4.3A Current - Continuous Drain (Id) @ 25°C
45mOhm @ 5.8A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
25nC @ 10V Gate Charge (Qg) (Max) @ Vgs
520pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
2.5W Power - Max
Surface Mount Mounting Type