Infineon AUIRF7316QTR

MOSFET（金属氧化物）逻辑电平门2 个 P 沟道（双）30V58 毫欧 @ 4.9A，10V3V @ 250µA

Overview

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Features

HEXFET® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
30V Drain to Source Voltage (Vdss)
58mOhm @ 4.9A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
34nC @ 10V Gate Charge (Qg) (Max) @ Vgs
710pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
2W Power - Max
Surface Mount Mounting Type