Infineon AUIRF7316Q

MOSFET（金属氧化物）逻辑电平门2 个 P 沟道（双）30V58 毫欧 @ 4.9A，10V3V @ 250µA

Features

HEXFET® Series
Tube Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
30V Drain to Source Voltage (Vdss)
58mOhm @ 4.9A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
34nC @ 10V Gate Charge (Qg) (Max) @ Vgs
710pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
2W Power - Max
Surface Mount Mounting Type