TI CSD19531Q5AT

N 通道100 V100A（Ta）3.3V @ 250µA3.3W（Ta），125W（Tc）-55°C ~ 150°C（TJ）表面贴装型

Overview

The CSD19531Q5A is MOSFET 100V 5.3mOhm Pwr MOSFET, that includes CSD19531Q5A Series, they are designed to operate with a Reel Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Tradename features such as NexFET, Package Case is designed to work in VSON-FET-8, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 3.3 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 5.2 ns, and the Rise Time is 5.8 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 110 A, and Vds Drain Source Breakdown Voltage is 100 V, and the Vgs th Gate Source Threshold Voltage is 2.7 V, and Rds On Drain Source Resistance is 6 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 18.4 ns, and the Typical Turn On Delay Time is 6 ns, and Qg Gate Charge is 37 nC, and the Forward Transconductance Min is 82 S, and Channel Mode is Enhancement.

The CSD19506KTTT is "MOSFET 80 V manufactured by TI. The CSD19506KTTT is available in TO-263-3 Package, is part of the Transistors - FETs, MOSFETs - Single, , and with support for "MOSFET 80 V, N-Channel 80V 200A (Ta) 375W (Tc) Surface Mount DDPAK/TO-263-3, Trans MOSFET N-CH 80V 200A 4-Pin(3+Tab) TO-263 T/R, MOSFET 80 V, N-Channel NexFET Power MOSFET 3-DDPAK/TO-263 -55 to 175.

Features

• Logic level

• Ultra-low Qg and Qgd

• Low-thermal resistance

• Available in the SON plastic package

Applications

• Motor control

• Primary side telecom

• Secondary side synchronous rectifier