TI CSD17313Q2

N 通道30 V5A（Tc）1.8V @ 250µA2.3W（Ta）-55°C ~ 150°C（TJ）表面贴装型

Overview

The CSD17311Q5 is MOSFET N-CH 30V 100A 8SON, that includes NexFET? Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Tradename features such as NexFET, Package Case is designed to work in 8-PowerTDFN, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a 8-VSON (5x6) of Supplier Device Package, and Configuration is Single, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 3.2W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 30V, and the Input Capacitance Ciss Vds is 4280pF @ 15V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 32A (Ta), 100A (Tc), and Rds On Max Id Vgs is 2 mOhm @ 30A, 8V, and the Vgs th Max Id is 1.6V @ 250μA, and Gate Charge Qg Vgs is 31nC @ 4.5V, and the Pd Power Dissipation is 3.2 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 12 ns, and the Rise Time is 18 ns, and Vgs Gate Source Voltage is 10 V, and the Id Continuous Drain Current is 32 A, and Vds Drain Source Breakdown Voltage is 30 V, and the Vgs th Gate Source Threshold Voltage is 1.2 V, and Rds On Drain Source Resistance is 2.3 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 33 ns, and the Typical Turn On Delay Time is 12 ns, and Qg Gate Charge is 24 nC, and the Forward Transconductance Min is 200 S.

The CSD17310Q5A is MOSFET N-CH 30V 100A 8SON, that includes Single Configuration, they are designed to operate with a 85 S Forward Transconductance Min, Id Continuous Drain Current is shown on datasheet note for use in a 21 A, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, as well as the SMD/SMT Mounting Style, the device can also be used as 1 Channel Number of Channels. In addition, the Package Case is VSON-FET-8, the device is offered in Reel Packaging, the device has a 3.1 W of Pd Power Dissipation, and Qg Gate Charge is 8.9 nC, and the Rds On Drain Source Resistance is 5.9 mOhms, and Series is CSD17310Q5A, and the Technology is Si, and Tradename is NexFET, and the Transistor Polarity is N-Channel, and Transistor Type is 1 N-Channel, and the Typical Turn Off Delay Time is 15 ns, and Typical Turn On Delay Time is 6.5 ns, and the Vds Drain Source Breakdown Voltage is 30 V, and Vgs Gate Source Voltage is 10 V, and the Vgs th Gate Source Threshold Voltage is 1.3 V.

Features

• Optimized for 5-V Gate Drive

• Ultra-Low Qg and Qgd

• Low Thermal Resistance

• Pb-Free

• RoHS Compliant

• Halogen-Free

• SON 2-mm × 2-mm Plastic Package

Applications

• DC-DC Converters

• Load Management Applications

• E-Mobility

• E-Communication or Internet-of-Things

• Stationary Energy Storage

• Cordless Power Tools