TI CSD19537Q3

N 通道100 V50A（Ta）3.6V @ 250µA2.8W（Ta），83W（Tc）-55°C ~ 150°C（TJ）表面贴装型

Overview

This 100-V, 12.1-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

• Primary Side Isolated Converters • Motor Control

Features

NexFET™ Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
100 V Drain to Source Voltage (Vdss)
50A (Ta) Current - Continuous Drain (Id) @ 25°C
6V, 10V Drive Voltage (Max Rds On, Min Rds On)
14.5mOhm @ 10A, 10V Rds On (Max) @ Id, Vgs
3.6V @ 250µA Vgs(th) (Max) @ Id
21 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
1680 pF @ 50 V Input Capacitance (Ciss) (Max) @ Vds
2.8W (Ta), 83W (Tc) Power Dissipation (Max)
Surface Mount Mounting Type

Applications

 

Ultra-Low Resistance

Low Thermal Resistance

Avalanche Rated

Pb Free Terminal Plating

RoHS Compliant

Halogen Free

 

 

CSD19537Q3 Applications

 

Solid State Relay Switch

DC-DC Conversion

Secondary Side Synchronous Rectifier

Isolated Converter Primary Side Switch

Motor Control