联系我们
中文
CSD25402Q3A

TI CSD25402Q3A

P 通道20 V76A(Tc)1.15V @ 250µA2.8W(Ta),69W(Tc)-55°C ~ 150°C(TJ)表面贴装型

比较
CSD25402Q3A
MOSFET P-CH 20V 76A 8VSON
paypalvisamastercarddiscover
upsdhlsf
比较

¥1.18

价格更新:一个月前

博斯克质量保证

912ob9001 201514001 201545001 201813485 2016esdduns
产品详情

Overview

The CSD25310Q2 is MOSFET P-CH 20V 48A 6SON, that includes NexFET? Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Tradename features such as NexFET, Package Case is designed to work in 6-WDFN Exposed Pad, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Number of Channels is 1 Channel, the device is offered in 6-WSON (2x2) Supplier Device Package, the device has a Single Channel of Configuration, and FET Type is MOSFET P-Channel, Metal Oxide, and the Power Max is 2.9W, and Transistor Type is 1 P-Channel, and the Drain to Source Voltage Vdss is 20V, and Input Capacitance Ciss Vds is 655pF @ 10V, and the FET Feature is Standard, and Current Continuous Drain Id 25°C is 20A (Ta), and the Rds On Max Id Vgs is 23.9 mOhm @ 5A, 4.5V, and Vgs th Max Id is 1.1V @ 250μA, and the Gate Charge Qg Vgs is 4.7nC @ 4.5V, and Pd Power Dissipation is 2.9 W, it has an Maximum Operating Temperature range of + 85 C, it has an Minimum Operating Temperature range of - 40 C, and the Fall Time is 5 ns, and Rise Time is 15 ns, and the Vgs Gate Source Voltage is - 8 V, and Id Continuous Drain Current is - 9.6 A, and the Vds Drain Source Breakdown Voltage is - 20 V, and Vgs th Gate Source Threshold Voltage is - 850 mV, and the Rds On Drain Source Resistance is 23.9 mOhms, and Transistor Polarity is P-Channel, and the Typical Turn Off Delay Time is 15 ns, and Typical Turn On Delay Time is 8 ns, and the Qg Gate Charge is 3.6 nC, and Forward Transconductance Min is 34 S.

The CSD25401Q3 is MOSFET P-CH 20V 60A 8-SON manufactured by TI. The CSD25401Q3 is available in TSSOP-16 Package, is part of the FETs - Single, , and with support for MOSFET P-CH 20V 60A 8-SON, P-Channel 20V 14A (Ta), 60A (Tc) 2.8W (Ta) Surface Mount 8-VSON (3.3x3.3).

Features

NexFET™ Series


  • Ultra-Low Qg and Qgd

  • Low Thermal Resistance

  • Low RDS(on) 

  • Pb and Halogen Free

  • RoHS Compliant

  • SON 3.3 mm × 3.3 mm Plastic Package



Surface Mount Mounting Type

Applications


  • DC-DC Converters

  • Battery Management

  • Load Switch

  • Battery Protection 


产品属性
全选
型号系列: NexFET™
包装: 卷带(TR)
部件状态: 在售
FET 类型: P 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 20 V
25°C 时电流 - 连续漏极 (Id): 76A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 1.8V,4.5V
漏极电流和栅极至源极电压下的最大导通电阻: 8.9 毫欧 @ 10A,4.5V
漏极电流下的最大栅极阈值电压: 1.15V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 9.7 nC @ 4.5 V
最大栅极源电压: ±12V
Vds 时的最大输入电容 (Ciss): 1790 pF @ 10 V
最大功率耗散: 2.8W(Ta),69W(Tc)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
供应商器件封装: 8-VSONP(3x3.15)
封装/外壳: 8-PowerVDFN
Texas Instruments

Texas Instruments

Texas Instruments(TI)是一家全球领先的半导体公司,专注于模拟和嵌入式处理器的设计和制造。公司成立于1930年,总部位于美国德克萨斯州达拉斯。TI的产品广泛应用于工业、汽车、个人电子、通信设备和企业系统等领域,致力于通过半导体技术推动电子设备的创新和普及。

实时新闻

博斯克数字

收入: 85M

2022年的收入为8500万美元,与2021年增长63%。

国家: 105

博斯克服务全球105个国家的客户。

配件发货: 25M+

我们在过去的五年中发货了2.5亿个配件,比前五年增长148%。

制造商: 950

2022年,博斯克从近950个制造商售卖了配件。

所有产品零件号 0 - Z