ST STF21N90K5

N 通道900 V18.5A（Tc）5V @ 100µA40W（Tc）-55°C ~ 150°C（TJ）通孔

Overview

These devices are N-channel Power MOSFETs developed using SuperMESH 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency.

Features

SuperMESH5™ Series
Tube Package
MOSFET (Metal Oxide) Technology
900 V Drain to Source Voltage (Vdss)
18.5A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
299mOhm @ 9A, 10V Rds On (Max) @ Id, Vgs
5V @ 100µA Vgs(th) (Max) @ Id
43 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±30V Vgs (Max)
1645 pF @ 100 V Input Capacitance (Ciss) (Max) @ Vds
40W (Tc) Power Dissipation (Max)
Through Hole Mounting Type

Applications

 

100% avalanche tested

TO-220 worldwide best RDS(on)

Zener-protected

Ultra low gate charge

Worldwide best FOM

 

STF21N90K5 Applications

 

Switching applications

PFC

server/telecom power

FPD TV power

ATX power

Industrial power