ST STF20NF06

N 通道60 V20A（Tc）4V @ 250µA28W（Tc）-55°C ~ 175°C（TJ）通孔

Overview

The STF203-33.TCT is TVS USB 33OHM RES 5.25V SC70-6, that includes Digi-ReelR Alternate Packaging Packaging, they are designed to operate with a 5 uA Current Rating, Termination Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as 6-TSSOP, SC-88, SOT-363, Technology is designed to work in Mixed Technology, as well as the General Purpose Applications, the device can also be used as 4 Channel Number of Channels. In addition, the Number of Circuits is 4, the device is offered in 100mW Power Watts, the device has a 5.25V of Voltage Working, and Supplier Device Packagee is , and the Pd Power Dissipation is 100 mW, it has an Maximum Operating Temperature range of + 125 C, it has an Minimum Operating Temperature range of - 40 C, and Breakdown Voltage is 6 V, and the Cd Diode Capacitance is 60 pF, and Working Voltage is 5.25 V, and the Polarity is Unidirectional, and Vesd Voltage ESD Contact is 8 kV, and the Vesd Voltage ESD Air Gap is 15 kV, and Operating Supply Voltage is 5.25 V.

The STF20N95K5 is MOSFET N-Ch 950V 0.275 Ohm 17.5A MDmesh K5, that includes 17.5 A Id Continuous Drain Current, they are designed to operate with a Through Hole Mounting Style, Number of Channels is shown on datasheet note for use in a 1 Channel, that offers Package Case features such as TO-220-3, Packaging is designed to work in Tube, as well as the 40 W Pd Power Dissipation, the device can also be used as 40 nC Qg Gate Charge. In addition, the Rds On Drain Source Resistance is 330 mOhms, the device is offered in MDmesh K5 Series, the device has a Si of Technology, and Transistor Polarity is N-Channel, and the Transistor Type is 1 N-Channel, and Unit Weight is 0.011640 oz, and the Vds Drain Source Breakdown Voltage is 950 V.

Features

• Avalanche rugged technology

• 100% avalanche tested

• 170℃operating temperature

• High dv/dt capability

• Application-oriented characterization

Applications

• Switching applications