ST STF11NM80

N 通道800 V11A（Tc）5V @ 250µA35W（Tc）-65°C ~ 150°C（TJ）通孔

Overview

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.

Features

• Gate charge and input capacitance are both low.

• Input gate resistance is low.

• The industry's best RDS(on)*Qg

Applications

Switching applications