ST STF11NM65N

N 通道650 V11A（Tc）4V @ 250µA25W（Tc）150°C（TJ）通孔

Overview

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

• 100% avalanche tested • Low input capacitance and gate charge • low gate input resistance

Features

MDmesh™ II Series
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 48A.

Through Hole Mounting Type

Applications

There are a lot of STMicroelectronics
STF11NM65N applications of single MOSFETs transistors.

• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies