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STD8NM60ND

ST STD8NM60ND

N 通道600 V7A(Tc)5V @ 250µA70W(Tc)150°C(TJ)表面贴装型

比较
STD8NM60ND
MOSFET N-CH 600V 7A DPAK
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比较

¥2.79

价格更新:一个月前

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产品详情

Overview

The STD8NF25 is MOSFET N-CH 250V 8A DPAK, that includes N-channel STripFET Series, they are designed to operate with a Reel Packaging, Unit Weight is shown on datasheet note for use in a 0.139332 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-252-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Transistor Type is 1 N-Channel, the device is offered in 72 W Pd Power Dissipation, the device has a 6 A of Id Continuous Drain Current, and Vds Drain Source Breakdown Voltage is 250 V, and the Rds On Drain Source Resistance is 420 mOhms, and Transistor Polarity is N-Channel, and the Qg Gate Charge is 16 nC.

The STD8NM60N is MOSFET N-CH 600V 7A DPAK manufactured by ST. The STD8NM60N is available in TO-252-3, DPak (2 Leads + Tab), SC-63 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 600V 7A DPAK, N-Channel 600V 7A (Tc) 70W (Tc) Surface Mount D-Pak.

Features

FDmesh™ II Series
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 37 ns
based on its rated peak drain current 28A.
a threshold voltage of 4V

DPAK Supplier Device Package

Applications


There are a lot of STMicroelectronics
STD8NM60ND applications of single MOSFETs transistors.

  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
产品属性
全选
型号系列: FDmesh™ II
包装: 卷带(TR)
部件状态: 停产
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 600 V
25°C 时电流 - 连续漏极 (Id): 7A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 700 毫欧 @ 3.5A,10V
漏极电流下的最大栅极阈值电压: 5V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 22 nC @ 10 V
最大栅极源电压: ±30V
Vds 时的最大输入电容 (Ciss): 560 pF @ 50 V
最大功率耗散: 70W(Tc)
工作温度: 150°C(TJ)
安装类型: 表面贴装型
供应商器件封装: DPAK
封装/外壳: TO-252-3,DPak(2 引线 + 接片),SC-63
STMicroelectronics

STMicroelectronics

STMicroelectronics(ST)是一家领先的半导体公司,成立于1987年,总部位于瑞士日内瓦。公司提供多种半导体解决方案,应用于汽车、工业、个人电子和通信等领域。ST的产品组合包括微控制器、传感器、模拟IC和电源管理芯片等。

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