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Overview
The STD80N6F6 is MOSFET N-CH 60V DPAK, that includes DeepGATE?, STripFET? VI Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.139332 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-252-3, DPak (2 Leads + Tab), SC-63, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 175°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a DPAK of Supplier Device Package, and Configuration is Single, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 120W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 60V, and the Input Capacitance Ciss Vds is 7480pF @ 25V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 80A (Tc), and Rds On Max Id Vgs is 6.5 mOhm @ 40A, 10V, and the Vgs th Max Id is 4.5V @ 250μA, and Gate Charge Qg Vgs is 122nC @ 10V, and the Pd Power Dissipation is 120 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 80 A, and Vds Drain Source Breakdown Voltage is 60 V, and the Vgs th Gate Source Threshold Voltage is 4.5 V, and Rds On Drain Source Resistance is 6.5 mOhms, and the Transistor Polarity is N-Channel, and Qg Gate Charge is 122 nC.
The STD815CP40 is TRANS NPN/PNP 400V 1.5A 8DIP, that includes Tube Packaging, they are designed to operate with a Through Hole Mounting Type, Transistor Type is shown on datasheet note for use in a NPN, PNP, that offers Package Case features such as 8-DIP (0.300", 7.62mm), Supplier Device Package is designed to work in 8-DIP, as well as the 400V Voltage Collector Emitter Breakdown Max, the device can also be used as 2.6W Power Max. In addition, the Vce Saturation Max Ib Ic is 1V @ 50mA, 350mA, the device is offered in 1mA Current Collector Cutoff Max, the device has a 16 @ 350mA, 5V of DC Current Gain hFE Min Ic Vce, and Current Collector Ic Max is 1.5A.
Features
Tape & Reel (TR) Packagethe DC current gain for this device is 100 @ 100mA 2V
the vce saturation(Max) is 1.1V @ 150mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
DPAK Supplier Device Package
Applications
There are a lot of STMicroelectronics
STD826T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
- 起步价为$40,南非、巴西、印度、巴基斯坦、以色列等国家的价格会有所变动,详情请咨询相关客服人员。
- 包裹重量≤0.5kg的基本运费根据时区和国家而定。
- 我们的产品目前使用DHL,顺丰和UPS运输。如果数量少,则选择联邦快递。
- 一旦发货,预期交货时间跟选择的运输方式有所变动。
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STMicroelectronics
STMicroelectronics(ST)是一家领先的半导体公司,成立于1987年,总部位于瑞士日内瓦。公司提供多种半导体解决方案,应用于汽车、工业、个人电子和通信等领域。ST的产品组合包括微控制器、传感器、模拟IC和电源管理芯片等。
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博斯克数字
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