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STD826T4

ST STD826T4

PNP3 A30 V

比较
STD826T4
TRANS PNP 30V 3A DPAK
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比较

¥0.59

价格更新:一个月前

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产品详情

Overview

The STD80N6F6 is MOSFET N-CH 60V DPAK, that includes DeepGATE?, STripFET? VI Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.139332 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-252-3, DPak (2 Leads + Tab), SC-63, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 175°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a DPAK of Supplier Device Package, and Configuration is Single, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 120W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 60V, and the Input Capacitance Ciss Vds is 7480pF @ 25V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 80A (Tc), and Rds On Max Id Vgs is 6.5 mOhm @ 40A, 10V, and the Vgs th Max Id is 4.5V @ 250μA, and Gate Charge Qg Vgs is 122nC @ 10V, and the Pd Power Dissipation is 120 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 80 A, and Vds Drain Source Breakdown Voltage is 60 V, and the Vgs th Gate Source Threshold Voltage is 4.5 V, and Rds On Drain Source Resistance is 6.5 mOhms, and the Transistor Polarity is N-Channel, and Qg Gate Charge is 122 nC.

The STD815CP40 is TRANS NPN/PNP 400V 1.5A 8DIP, that includes Tube Packaging, they are designed to operate with a Through Hole Mounting Type, Transistor Type is shown on datasheet note for use in a NPN, PNP, that offers Package Case features such as 8-DIP (0.300", 7.62mm), Supplier Device Package is designed to work in 8-DIP, as well as the 400V Voltage Collector Emitter Breakdown Max, the device can also be used as 2.6W Power Max. In addition, the Vce Saturation Max Ib Ic is 1V @ 50mA, 350mA, the device is offered in 1mA Current Collector Cutoff Max, the device has a 16 @ 350mA, 5V of DC Current Gain hFE Min Ic Vce, and Current Collector Ic Max is 1.5A.

Features

Tape & Reel (TR) Package
the DC current gain for this device is 100 @ 100mA 2V
the vce saturation(Max) is 1.1V @ 150mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

DPAK Supplier Device Package

Applications


There are a lot of STMicroelectronics
STD826T4 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting
产品属性
全选
包装: 卷带(TR)
部件状态: 停产
晶体管类型: PNP
集电极电流 (Ic)(最大值): 3 A
最大集电极-发射极击穿电压: 30 V
基极电流和集电极电流下的最大集电极-发射极饱和电压: 1.1V @ 150mA,3A
电流 - 集电极截止(最大值): 100µA
直流电流增益 (hFE) 最小值 @ Ic、Vce: 100 @ 100mA,2V
最大功率: 15 W
频率 - 跃迁: 100MHz
工作温度: 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: TO-252-3,DPak(2 引线 + 接片),SC-63
供应商器件封装: DPAK
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