ST STD7NM80

N 通道800 V6.5A（Tc）5V @ 250µA90W（Tc）-55°C ~ 150°C（TJ）表面贴装型

Overview

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.

Features

MDmesh™ Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
800 V Drain to Source Voltage (Vdss)
6.5A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
1.05Ohm @ 3.25A, 10V Rds On (Max) @ Id, Vgs
5V @ 250µA Vgs(th) (Max) @ Id
18 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±30V Vgs (Max)
620 pF @ 25 V Input Capacitance (Ciss) (Max) @ Vds
90W (Tc) Power Dissipation (Max)
Surface Mount Mounting Type
DPAK Supplier Device Package