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STB80NF55-08T4

ST STB80NF55-08T4

N 通道55 V80A(Tc)4V @ 250µA300W(Tc)-55°C ~ 175°C(TJ)表面贴装型

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STB80NF55-08T4
MOSFET N-CH 55V 80A D2PAK
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¥27.25

价格更新:一个月前

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产品详情

Overview

The STB80NF55-06T4 is MOSFET N-CH 55V 80A D2PAK, that includes STripFET? II Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.139332 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 175°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a D2PAK of Supplier Device Package, and Configuration is Single, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 300W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 55V, and the Input Capacitance Ciss Vds is 4400pF @ 25V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 80A (Tc), and Rds On Max Id Vgs is 6.5 mOhm @ 40A, 10V, and the Vgs th Max Id is 4V @ 250μA, and Gate Charge Qg Vgs is 189nC @ 10V, and the Pd Power Dissipation is 300 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 65 ns, and the Rise Time is 155 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 80 A, and Vds Drain Source Breakdown Voltage is 55 V, and the Rds On Drain Source Resistance is 6.5 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 125 ns, and Typical Turn On Delay Time is 27 ns, and the Forward Transconductance Min is 150 S, and Channel Mode is Enhancement.

STB80NF55-06T with circuit diagram manufactured by ST. The STB80NF55-06T is available in TO-263 Package, is part of the FETs - Single.

Features

STripFET™ Series
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 75 ns
a threshold voltage of 3V

D2PAK Supplier Device Package

Applications


There are a lot of STMicroelectronics
STB80NF55-08T4 applications of single MOSFETs transistors.

  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
产品属性
全选
型号系列: STripFET™
包装: 卷带(TR)
部件状态: 停产
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 55 V
25°C 时电流 - 连续漏极 (Id): 80A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 8 毫欧 @ 40A,10V
漏极电流下的最大栅极阈值电压: 4V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 155 nC @ 10 V
最大栅极源电压: ±20V
Vds 时的最大输入电容 (Ciss): 3850 pF @ 25 V
最大功率耗散: 300W(Tc)
工作温度: -55°C ~ 175°C(TJ)
安装类型: 表面贴装型
供应商器件封装: D2PAK
封装/外壳: TO-263-3,D²Pak(2 引线 + 接片),TO-263AB
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