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VP2110K1-G

Microchip VP2110K1-G

P 通道100 V120mA(Tj)3.5V @ 1mA360mW(Ta)-55°C ~ 150°C(TJ)表面贴装型

比较
VP2110K1-G
MOSFET P-CH 100V 120MA TO236AB
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¥6.79

价格更新:一个月前

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产品详情

Overview

VP2106N3-G P013 with pin details, that includes Reel Packaging, they are designed to operate with a 0.016000 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-92-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 P-Channel, the device is offered in 740 mW Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 4 ns, and Rise Time is 5 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is - 250 mA, and the Vds Drain Source Breakdown Voltage is - 60 V, and Rds On Drain Source Resistance is 15 Ohms, and the Transistor Polarity is P-Channel, and Typical Turn Off Delay Time is 5 ns, and the Typical Turn On Delay Time is 4 ns, and Channel Mode is Enhancement.

VP2106N3-G P005 with circuit diagram, that includes Enhancement Channel Mode, they are designed to operate with a - 250 mA Id Continuous Drain Current, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Number of Channels features such as 1 Channel, Package Case is designed to work in TO-92-3, as well as the Reel Packaging, the device can also be used as 15 Ohms Rds On Drain Source Resistance. In addition, the Technology is Si, the device is offered in P-Channel Transistor Polarity, the device has a 1 P-Channel of Transistor Type, and Unit Weight is 0.016000 oz, and the Vds Drain Source Breakdown Voltage is - 60 V.

Features

Tape & Reel (TR) Package
a continuous drain current (ID) of 120mA
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 5 ns
a 100V drain to source voltage (Vdss)

Surface Mount Mounting Type

Applications


There are a lot of Microchip Technology
VP2110K1-G applications of single MOSFETs transistors.

  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
产品属性
全选
包装: 卷带(TR)
部件状态: 在售
FET 类型: P 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 100 V
25°C 时电流 - 连续漏极 (Id): 120mA(Tj)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 5V,10V
漏极电流和栅极至源极电压下的最大导通电阻: 12 欧姆 @ 500mA,10V
漏极电流下的最大栅极阈值电压: 3.5V @ 1mA
最大栅极源电压: ±20V
Vds 时的最大输入电容 (Ciss): 60 pF @ 25 V
最大功率耗散: 360mW(Ta)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
供应商器件封装: TO-236AB(SOT23)
封装/外壳: TO-236-3,SC-59,SOT-23-3
Microchip Technology

Microchip Technology

Microchip Technology是一家全球领先的半导体供应商,成立于1989年,总部位于美国亚利桑那州钱德勒。公司专注于提供微控制器、混合信号、模拟和闪存IP解决方案,服务于广泛的嵌入式控制应用市场。

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