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VP0808L-G

Microchip VP0808L-G

P 通道80 V280mA(Tj)4.5V @ 1mA1W(Tc)-55°C ~ 150°C(TJ)通孔

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VP0808L-G
MOSFET P-CH 80V 280MA TO92-3
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¥9.56

价格更新:一个月前

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产品详情

Overview

The VP0808L-G is MOSFET 80V 5Ohm, that includes Bulk Packaging, they are designed to operate with a 0.016000 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-92-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 P-Channel, the device is offered in 1 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 30 ns, and Rise Time is 40 ns, and the Vgs Gate Source Voltage is 30 V, and Id Continuous Drain Current is - 280 mA, and the Vds Drain Source Breakdown Voltage is - 80 V, and Rds On Drain Source Resistance is 5 Ohms, and the Transistor Polarity is P-Channel, and Typical Turn Off Delay Time is 30 ns, and the Typical Turn On Delay Time is 15 ns, and Channel Mode is Enhancement.

VP0808L-G P005 with EDA / CAD Models, that includes TO-92-3 Package Case, they are designed to operate with a Through Hole Mounting Style, Technology is shown on datasheet note for use in a Si, that offers Packaging features such as Reel, Transistor Polarity is designed to work in P-Channel, as well as the Enhancement Channel Mode, the device can also be used as 5 Ohms Rds On Drain Source Resistance. In addition, the Transistor Type is 1 P-Channel, the device is offered in 1 Channel Number of Channels, the device has a 0.016000 oz of Unit Weight, and Vds Drain Source Breakdown Voltage is - 80 V, and the Id Continuous Drain Current is - 280 mA.

Features

Bag Package
a continuous drain current (ID) of 280mA
a drain-to-source breakdown voltage of -80V voltage
the turn-off delay time is 30 ns
a 80V drain to source voltage (Vdss)

Through Hole Mounting Type

Applications


There are a lot of Microchip Technology
VP0808L-G applications of single MOSFETs transistors.

  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
产品属性
全选
包装: 袋
部件状态: 在售
FET 类型: P 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 80 V
25°C 时电流 - 连续漏极 (Id): 280mA(Tj)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 5 欧姆 @ 1A,10V
漏极电流下的最大栅极阈值电压: 4.5V @ 1mA
最大栅极源电压: ±30V
Vds 时的最大输入电容 (Ciss): 150 pF @ 25 V
最大功率耗散: 1W(Tc)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
供应商器件封装: TO-92-3
封装/外壳: TO-226-3,TO-92-3 标准主体(!--TO-226AA)
Microchip Technology

Microchip Technology

Microchip Technology是一家全球领先的半导体供应商,成立于1989年,总部位于美国亚利桑那州钱德勒。公司专注于提供微控制器、混合信号、模拟和闪存IP解决方案,服务于广泛的嵌入式控制应用市场。

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