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APT64GA90LD30

Microchip APT64GA90LD30

900 V117 A1192µJ(开),1088µJ(关)-55°C ~ 150°C(TJ)TO-264-3,TO-264AA

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APT64GA90LD30
IGBT 900V 117A 500W TO-264
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¥8.91

价格更新:一个月前

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产品详情

Overview

The APT64GA90B2D30 is IGBT 900V 117A 500W TO-247, that includes POWER MOS 8? Series, they are designed to operate with a Tube Packaging, Package Case is shown on datasheet note for use in a TO-247-3 Variant, that offers Input Type features such as Standard, Mounting Type is designed to work in Through Hole, as well as the 500W Power Max, the device can also be used as 117A Current Collector Ic Max. In addition, the Voltage Collector Emitter Breakdown Max is 900V, the device is offered in PT IGBT Type, the device has a 193A of Current Collector Pulsed Icm, and Vce on Max Vge Ic is 3.1V @ 15V, 38A, and the Switching Energy is 1192μJ (on), 1088μJ (off), and Gate Charge is 162nC, and the Td on off 25°C is 18ns/131ns, and Test Condition is 600V, 38A, 4.7 Ohm, 15V.

APT64GA120B with circuit diagram manufactured by APT. The APT64GA120B is available in TO-247 Package, is part of the IC Chips.

Features

POWER MOS 8™ Series
Tube Package
PT IGBT Type
900 V Voltage - Collector Emitter Breakdown (Max)
117 A Current - Collector (Ic) (Max)
193 A Current - Collector Pulsed (Icm)
3.1V @ 15V, 38A Vce(on) (Max) @ Vge, Ic
500 W Power - Max
1192µJ (on), 1088µJ (off) Switching Energy
Standard Input Type
162 nC Gate Charge
18ns/131ns Td (on/off) @ 25°C
600V, 38A, 4.7Ohm, 15V Test Condition
Through Hole Mounting Type
产品属性
全选
型号系列: POWER MOS 8™
包装: 管件
部件状态: 在售
IGBT 类型: PT
最大集电极-发射极击穿电压: 900 V
集电极电流 (Ic)(最大值): 117 A
电流 - 集电极脉冲 (Icm): 193 A
栅极-发射极电压和集电极电流时的最大集电极-发射极导通电压: 3.1V @ 15V,38A
最大功率: 500 W
开关能量: 1192µJ(开),1088µJ(关)
输入类型: 标准
栅极电荷: 162 nC
25°C 时的开/关延迟时间: 18ns/131ns
测试条件: 600V,38A,4.7 欧姆,15V
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
封装/外壳: TO-264-3,TO-264AA
供应商器件封装: TO-264 [L]
Microchip Technology

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