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APT38N60BC6

Microchip APT38N60BC6

N 通道600 V38A(Tc)3.5V @ 1.2mA278W(Tc)-55°C ~ 150°C(TJ)通孔

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APT38N60BC6
MOSFET N-CH 600V 38A TO247
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¥3.84

价格更新:一个月前

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产品详情

Overview

The APT38F80L is MOSFET N-CH 800V 41A TO-264, that includes Reel Packaging, they are designed to operate with a 0.352740 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-264, Technology is designed to work in Si, as well as the Single Configuration, the device can also be used as 1.04 kW Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, the device has a 60 ns of Fall Time, and Rise Time is 65 ns, and the Vgs Gate Source Voltage is +/- 30 V, and Id Continuous Drain Current is 41 A, and the Vds Drain Source Breakdown Voltage is 800 V, and Vgs th Gate Source Threshold Voltage is 4 V, and the Rds On Drain Source Resistance is 240 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 200 ns, and Typical Turn On Delay Time is 46 ns, and the Qg Gate Charge is 260 nC, and Forward Transconductance Min is 38 S, and the Channel Mode is Enhancement.

The APT38M50J is MOSFET Power MOSFET - MOS8, that includes Si Technology.

Features

CoolMOS™ Series
the avalanche energy rating (Eas) is 796 mJ
a continuous drain current (ID) of 38A
the turn-off delay time is 118 ns
a 600V drain to source voltage (Vdss)

Through Hole Mounting Type

Applications


There are a lot of Microsemi Corporation
APT38N60BC6 applications of single MOSFETs transistors.

  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
产品属性
全选
型号系列: CoolMOS™
包装: 管件
部件状态: 在售
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 600 V
25°C 时电流 - 连续漏极 (Id): 38A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 99 毫欧 @ 18A,10V
漏极电流下的最大栅极阈值电压: 3.5V @ 1.2mA
最大栅极电荷 (Qg) @ Vgs: 112 nC @ 10 V
最大栅极源电压: ±20V
Vds 时的最大输入电容 (Ciss): 2826 pF @ 25 V
最大功率耗散: 278W(Tc)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
供应商器件封装: TO-247 [B]
封装/外壳: TO-247-3
Microchip Technology

Microchip Technology

Microchip Technology是一家全球领先的半导体供应商,成立于1989年,总部位于美国亚利桑那州钱德勒。公司专注于提供微控制器、混合信号、模拟和闪存IP解决方案,服务于广泛的嵌入式控制应用市场。

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