Microchip 2N5115E3

30 V100 OhmsTO-206AA，TO-18-3 金属罐

Overview

The 2N5115 is JFET P-CH 30V TO-18, that includes Tube Packaging, they are designed to operate with a IFN5115 Part Aliases, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-206AA, TO-18-3 Metal Can, Technology is designed to work in Si, as well as the Through Hole Mounting Type, the device can also be used as TO-206AA (TO-18) Supplier Device Package. In addition, the Configuration is Single, the device is offered in 500 mW Pd Power Dissipation, the device has a - 15 mA of Id Continuous Drain Current, and Vds Drain Source Breakdown Voltage is - 15 V, and the Rds On Drain Source Resistance is 100 Ohms, and Transistor Polarity is P-Channel, and the Vgs Gate Source Breakdown Voltage is 30 V, and Gate Source Cutoff Voltage is 6 V.

2N5114UB with circuit diagram manufactured by Microsemi. is part of the JFETs (Junction Field Effect), , and with support for JFET P Channel Jfet, JFET P-Channel 30V 500mW Surface Mount UB, Trans JFET P-CH 30V 3-Pin UB.

Features

Bulk Package
30 V Voltage - Breakdown (V(BR)GSS)
30 V Drain to Source Voltage (Vdss)
15 mA @ 15 V Current - Drain (Idss) @ Vds (Vgs=0)
3 V @ 1 nA Voltage - Cutoff (VGS off) @ Id
25pF @ 15V Input Capacitance (Ciss) (Max) @ Vds
100 Ohms Resistance - RDS(On)
500 mW Power - Max
Through Hole Mounting Type