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2N5089

ON 2N5089

NPN50 mA25 V

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2N5089
TRANS NPN 25V 0.05A TO92
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¥0.06

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产品详情

Overview

The 2N5088TA is TRANS NPN 30V 0.1A TO-92, that includes Cut Tape (CT) Alternate Packaging Packaging, they are designed to operate with a 2N5088TA_NL Part Aliases, Unit Weight is shown on datasheet note for use in a 0.008466 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), as well as the Through Hole Mounting Type, the device can also be used as TO-92-3 Supplier Device Package. In addition, the Configuration is Single, the device is offered in 625mW Power Max, the device has a NPN of Transistor Type, and Current Collector Ic Max is 100mA, and the Voltage Collector Emitter Breakdown Max is 30V, and DC Current Gain hFE Min Ic Vce is 300 @ 100μA, 5V, and the Vce Saturation Max Ib Ic is 500mV @ 1mA, 10mA, and Current Collector Cutoff Max is 50nA (ICBO), and the Frequency Transition is 50MHz, and Pd Power Dissipation is 625 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Collector Emitter Voltage VCEO Max is 30 V, and Transistor Polarity is NPN, and the Collector Emitter Saturation Voltage is 0.5 V, and Collector Base Voltage VCBO is 35 V, and the Emitter Base Voltage VEBO is 4.5 V, and Maximum DC Collector Current is 0.1 A, and the Gain Bandwidth Product fT is 50 MHz, and Continuous Collector Current is 0.1 A, and the DC Collector Base Gain hfe Min is 300, and DC Current Gain hFE Max is 900.

2N5088G with EDA / CAD Models manufactured by ON. The 2N5088G is available in TO-92 Package, is part of the IC Chips, Bipolar (BJT) Transistor NPN 30V 50mA 50MHz 625mW Through Hole TO-92-3, Trans GP BJT NPN 30V 0.05A 625mW 3-Pin TO-92 Box.

Features

Bulk Package
a collector emitter saturation voltage of 500mV
the emitter base voltage is kept at 4.5V
a transition frequency of 50MHz

Through Hole Mounting Type

Applications


There are a lot of Central Semiconductor
2N5089 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting
产品属性
全选
包装: 散装
部件状态: 停产
晶体管类型: NPN
集电极电流 (Ic)(最大值): 50 mA
最大集电极-发射极击穿电压: 25 V
基极电流和集电极电流下的最大集电极-发射极饱和电压: 500mV @ 1mA,10mA
电流 - 集电极截止(最大值): 50nA(ICBO)
直流电流增益 (hFE) 最小值 @ Ic、Vce: 400 @ 100µA,5V
最大功率: 625 mW
频率 - 跃迁: 50MHz
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
封装/外壳: TO-226-3,TO-92-3 长体
供应商器件封装: TO-92(TO-226)
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