Infineon IRF7530TRPBF

MOSFET（金属氧化物）2 N-通道（双）20V5.4A30 毫欧 @ 5.4A，4.5V1.2V @ 250µA

Overview

Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel configuration.

Features

 Trench Technology

Ultra Low On-Resistance

Dual N-Channel MOSFET

Very Small SOIC Package

Low Profile (<1.1mm)

Available in Tape & Reel

 Lead-Free

Applications

provides designers with extremely efficient and reliable devices that can be used in a variety of applications.