Infineon IR3580MTRPBF

控制器，Intel VR12，VR12.53.3V

Overview

These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.

• Ultra Low On-Resistance • N-Channel MOSFET • SOT-23 Footprint • Low Profile (<1.1mm) • Available in Tape and Reel • Fast Switching

Features

• Ultra Low Quiescent Power 8-phase single output PWM Controller

• Intel? VR12 and VR12.5, & Memory VR modes Overclocking & Gaming Modes

• PVI GPU VR mode

• Switching frequency from 194KHz to 2MHz per phase in 56 steps

• IR Efficiency Shaping Features including Variable Gate Drive, Dynamic Phase Control and Automatic Power State Switching

• Programmable 1-phase or 2-phase operation for Light Loads and Active Diode Emulation for Very

• Light Loads

• IR Adaptive Transient Algorithm (ATA) minimizes output bulk capacitors and system cost

• Auto-Phase Detection with PID Coefficient autoscaling

• Fault Protection: OVP, UVP, OCP, OTP, CAT FLT

• I2C/SMBus/PMBus system interface for reporting of Temperature, Voltage, Current & Power

• telemetry for both loops

• Multiple Time Programming (MTP) with integrated charge pump for easy non-volatile programming

• Compatible with 3.3V tri-state drivers and IR ATL mode drivers

• +3.3V supply voltage; -40oC to 85oC ambient operation

• Pb-Free, RoHS, 6x6mm 48-pin, 0.4mm pitch QFN 

Applications

• Intel? VR12 and VR12.5-based systems

• Overclocked & Gaming platforms