IR IRLML2502TR

N 通道20 V4.2A（Ta）1.2V @ 250µA表面贴装型

Overview

These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.

• Ultra Low On-Resistance • N-Channel MOSFET • SOT-23 Footprint • Low Profile (<1.1mm) • Available in Tape and Reel • Fast Switching

Features

• Ultra Low On-Resistance

• N-Channel MOSFET

• SOT-23 Footprint

• Low Profile (<1.1mm)

• Available in Tape and Reel

• Fast Switching

Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial