Infineon IPW60R190C6FKSA1

N 通道600 V20.2A（Tc）3.5V @ 630µA151W（Tc）-55°C ~ 150°C（TJ）通孔

Overview

The IPW60R190C6 is MOSFET N-CH 600V 20.2A TO247, that includes CoolMOS C6 Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IPW60R190C6FKSA1 IPW60R190C6XK SP000621160, that offers Unit Weight features such as 1.340411 oz, Mounting Style is designed to work in Through Hole, as well as the CoolMOS Tradename, the device can also be used as TO-247-3 Package Case. In addition, the Technology is Si, the device is offered in 1 Channel Number of Channels, the device has a Single of Configuration, and Transistor Type is 1 N-Channel, and the Pd Power Dissipation is 151 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 20.2 A, and Vds Drain Source Breakdown Voltage is 600 V, and the Rds On Drain Source Resistance is 190 mOhms, and Transistor Polarity is N-Channel.

IPW60R190C6=6R190C6 with EDA / CAD Models manufactured by INF. The IPW60R190C6=6R190C6 is available in TO-247 Package, is part of the IC Chips.

Features

• Easy to use/drive

• JEDEC qualified, Pb-free plating, Halogen-free

• Extremely low losses due to very low FOM Rdson*Qg and Eoss

• Very high commutation ruggedness

• Control high current ¨C voltage rating

Applications

• PFC stages

• hard switching PWM stages

• resonant switching

• PWM stages

• PC Silverbox

• Adapter

• LCD & PDP TV

• Lighting

• Server

• Telecom and UPS