Infineon IPW60R160P6

N 通道600 V23.8A（Tc）4.5V @ 750µA176W（Tc）-55°C ~ 150°C（TJ）通孔

Overview

Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.

Features

CoolMOS™ Series
Bulk Package
MOSFET (Metal Oxide) Technology
600 V Drain to Source Voltage (Vdss)
23.8A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
160mOhm @ 9A, 10V Rds On (Max) @ Id, Vgs
4.5V @ 750µA Vgs(th) (Max) @ Id
44 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
2080 pF @ 100 V Input Capacitance (Ciss) (Max) @ Vds
176W (Tc) Power Dissipation (Max)
Through Hole Mounting Type