Infineon IPP086N10N3

N 通道100 V80A（Tc）3.5V @ 75µA125W（Tc）-55°C ~ 175°C（TJ）通孔

Overview

IPP084N06L3G with pin details manufactured by INFINEON. The IPP084N06L3G is available in TO-220 Package, is part of the FETs - Single.

IPP086N10N with EDA / CAD Models manufactured by Infenon. The IPP086N10N is available in TO-220 Package, is part of the FETs - Single.

Features

OptiMOS™ Series
Bulk Package
MOSFET (Metal Oxide) Technology
100 V Drain to Source Voltage (Vdss)
80A (Tc) Current - Continuous Drain (Id) @ 25°C
6V, 10V Drive Voltage (Max Rds On, Min Rds On)
8.6mOhm @ 73A, 10V Rds On (Max) @ Id, Vgs
3.5V @ 75µA Vgs(th) (Max) @ Id
55 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
3980 pF @ 50 V Input Capacitance (Ciss) (Max) @ Vds
125W (Tc) Power Dissipation (Max)
Through Hole Mounting Type