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IPP076N15N5AKSA1

Infineon IPP076N15N5AKSA1

N 通道150 V112A(Tc)4.6V @ 160µA214W(Tc)-55°C ~ 175°C(TJ)通孔

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IPP076N15N5AKSA1
MOSFET N-CH 150V 112A TO220-3
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¥15.15

价格更新:一个月前

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产品详情

Overview

The IPP076N12N3 G is MOSFET N-Ch 120V 100A TO220-3 OptiMOS 3, that includes OptiMOS 3 Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IPP076N12N3GXK IPP076N12N3GXKSA1 SP000652736, that offers Unit Weight features such as 0.211644 oz, Mounting Style is designed to work in Through Hole, as well as the OptiMOS Tradename, the device can also be used as TO-220-3 Package Case. In addition, the Technology is Si, the device is offered in 1 Channel Number of Channels, the device has a 1 N-Channel of Transistor Type, and Pd Power Dissipation is 188 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 10 ns, and Rise Time is 50 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 100 A, and the Vds Drain Source Breakdown Voltage is 120 V, and Vgs th Gate Source Threshold Voltage is 3 V, and the Rds On Drain Source Resistance is 7.6 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 39 ns, and Typical Turn On Delay Time is 24 ns, and the Qg Gate Charge is 76 nC, and Forward Transconductance Min is 116 S 58 S.

The IPP076N12N3G is MOSFET N-CH 120V 100A TO220-3 manufactured by INFINEON. The IPP076N12N3G is available in TO-220-3 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 120V 100A TO220-3.

Features

OptiMOS™ 5 Series
a continuous drain current (ID) of 112A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 448A.
single MOSFETs transistor is 5.9mOhm
a 150V drain to source voltage (Vdss)

Through Hole Mounting Type

Applications


There are a lot of Infineon Technologies
IPP076N15N5AKSA1 applications of single MOSFETs transistors.

  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
产品属性
全选
型号系列: OptiMOS™ 5
包装: 管件
部件状态: 在售
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 150 V
25°C 时电流 - 连续漏极 (Id): 112A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 8V,10V
漏极电流和栅极至源极电压下的最大导通电阻: 7.6 毫欧 @ 56A,10
漏极电流下的最大栅极阈值电压: 4.6V @ 160µA
最大栅极电荷 (Qg) @ Vgs: 21 nC @ 10 V
最大栅极源电压: ±20V
Vds 时的最大输入电容 (Ciss): 4700 pF @ 75 V
FET 功能: 标准
最大功率耗散: 214W(Tc)
工作温度: -55°C ~ 175°C(TJ)
安装类型: 通孔
供应商器件封装: PG-TO220-3
封装/外壳: TO-220-3
Infineon Technologies

Infineon Technologies

Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。

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