Infineon IPG20N06S3L-23

MOSFET（金属氧化物）逻辑电平门2 N-通道（双）55V20A23 毫欧 @ 16A，10V2.2V @ 20µA

Overview

IPG20N06S2L65AATMA1 with pin details, that includes Automotive, AEC-Q101, OptiMOS? Series, they are designed to operate with a Tape & Reel (TR) Packaging, Package Case is shown on datasheet note for use in a 8-PowerVDFN, it has an Operating Temperature range of -55°C ~ 175°C (TJ), Mounting Type is designed to work in Surface Mount, as well as the PG-TDSON-8-10 Supplier Device Package, the device can also be used as 2 N-Channel (Dual) FET Type. In addition, the Power Max is 43W, the device is offered in 55V Drain to Source Voltage Vdss, the device has a 410pF @ 25V of Input Capacitance Ciss Vds, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 20A, and Rds On Max Id Vgs is 65 mOhm @ 15A, 10V, and the Vgs th Max Id is 2V @ 14μA, and Gate Charge Qg Vgs is 12nC @ 10V.

IPG20N06S2L65AUMA1 with circuit diagram, that includes 1 Channel Number of Channels, they are designed to operate with a TDSON-8 Package Case, Packaging is shown on datasheet note for use in a Reel, that offers Part Aliases features such as IPG20N06S2L-65 SP001214304, Technology is designed to work in Si, as well as the N-Channel Transistor Polarity, the device can also be used as 1 N-Channel Transistor Type.

Features

OptiMOS™ Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
55V Drain to Source Voltage (Vdss)
20A Current - Continuous Drain (Id) @ 25°C
23mOhm @ 16A, 10V Rds On (Max) @ Id, Vgs
2.2V @ 20µA Vgs(th) (Max) @ Id
42nC @ 10V Gate Charge (Qg) (Max) @ Vgs
2950pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
45W Power - Max
Surface Mount Mounting Type