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IPG20N06S2L65ATMA1

Infineon IPG20N06S2L65ATMA1

MOSFET(金属氧化物)逻辑电平门2 N-通道(双)55V20A65 毫欧 @ 15A,10V2V @ 14µA

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IPG20N06S2L65ATMA1
MOSFET 2N-CH 55V 20A TDSON-8-4
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¥3.72

价格更新:一个月前

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产品详情

Overview

The IPG20N06S2L-65 is MOSFET 2N-CH 55V 20A TDSON-8-4, that includes OptiMOS Series, they are designed to operate with a Reel Packaging, Part Aliases is shown on datasheet note for use in a IPG20N06S2L65ATMA1 IPG20N06S2L65AUMA1 SP001214304, that offers Mounting Style features such as SMD/SMT, Tradename is designed to work in OptiMOS, as well as the TDSON-8 Package Case, the device can also be used as Si Technology. In addition, the Number of Channels is 2 Channel, the device is offered in Dual Dual Drain Configuration, the device has a 2 N-Channel of Transistor Type, and Pd Power Dissipation is 43 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 7 ns, and Rise Time is 3 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 20 A, and the Vds Drain Source Breakdown Voltage is 55 V, and Rds On Drain Source Resistance is 65 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 10 nS, and the Typical Turn On Delay Time is 2 nS, and Qg Gate Charge is 9.4 nC.

The IPG20N06S2L-65A is MOSFET 2N-CH 55V 20A TDSON-8-4 manufactured by INFINEON. The IPG20N06S2L-65A is available in 8-PowerVDFN Package, is part of the FETs - Arrays, , and with support for MOSFET 2N-CH 55V 20A TDSON-8-4.

Features

Tape & Reel (TR) Package
the avalanche energy rating (Eas) is 40 mJ
a continuous drain current (ID) of 20 A
the turn-off delay time is 10 ns
based on its rated peak drain current 80 A.
single MOSFETs transistor is 53 mΩ
a 55 V drain to source voltage (Vdss)

Surface Mount Mounting Type

Applications


There are a lot of Infineon
IPG20N06S2L65ATMA1 applications of single MOSFETs transistors.

  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
产品属性
全选
型号系列: Automotive, AEC-Q101, OptiMOS™
包装: 卷带(TR)
部件状态: 在售
技术: MOSFET(金属氧化物)
FET 功能: 逻辑电平门
配置: 2 N-通道(双)
漏源电压(Vdss): 55V
25°C 时电流 - 连续漏极 (Id): 20A
漏极电流和栅极至源极电压下的最大导通电阻: 65 毫欧 @ 15A,10V
漏极电流下的最大栅极阈值电压: 2V @ 14µA
最大栅极电荷 (Qg) @ Vgs: 12nC @ 10V
Vds 时的最大输入电容 (Ciss): 410pF @ 25V
最大功率: 43W
工作温度: -55°C ~ 175°C(TJ)
安装类型: 表面贴装型
封装/外壳: 8-PowerVDFN
供应商器件封装: PG-TDSON-8-4
Infineon Technologies

Infineon Technologies

Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。

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