Infineon IKW75N60TFKSA1

600 V80 A4.5mJ-40°C ~ 175°C（TJ）TO-247-3

Overview

The IKW75N60TFKSA1 is a 600V Discrete IGBT with very soft, fast recovery anti-parallel emitter controlled diode. TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.

Features

• Very low VCE(sat) 1.5V (typ.)

• Maximum Junction Temperature 175°C

• Short circuit withstand time 5s

• Positive temperature coefficient in VCE(sat)

• very tight parameter distribution

• high ruggedness, temperature stable behaviour very high switching speed

• Low EMI

• Very soft, fast recovery anti-parallel Emitter Controlled HE diode

• Qualified according to JEDEC1) for target applications

• Pb-free lead plating; RoHS compliant

Applications

• Frequency Converters

• Uninterrupted Power Supply